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PD - 94355
SMPS MOSFET
IRFR420A IRFU420A
HEXFET(R) Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching
l
VDSS
500V
RDS(on) max
3.0
ID
3.3A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001)
l
D-Pak IRFR420A
I-Pak IRFU420A
Absolute Maximum Ratings
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ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
DataShee
Max.
3.3 2.1 10 83 0.67 30 3.4 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
140 2.5 5.0
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
1.5 --- 62
Units
C/W
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IRFR420A/IRFU420A
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- --- 2.0 --- --- --- --- Typ. --- 0.60 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 3.0 VGS = 10V, ID = 1.5A 4.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units Conditions 1.4 --- --- S VDS = 50V, ID = 1.5A --- --- 17 ID = 2.5A --- --- 4.3 nC VDS = 400V --- --- 8.5 VGS = 10V, See Fig. 6 and 13 --- 8.1 --- VDD = 250V --- 12 --- ID = 2.5A ns --- 16 --- RG = 21 --- 13 --- RD = 97,See Fig. 10 .com --- 340 --- VGS = 0V --- 53 --- VDS = 25V --- 2.7 --- pF = 1.0MHz, See Fig. 5 --- 490 --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- 15 --- VGS = 0V, VDS = 400V, = 1.0MHz --- 28 --- VGS = 0V, VDS = 0V to 400V
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DataShee
Diode Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 3.3 showing the A G integral reverse --- --- 10 S p-n junction diode. --- --- 1.6 V TJ = 25C, IS = 2.5A, VGS = 0V --- 330 500 ns TJ = 25C, I F = 2.5A --- 760 1140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 45mH
RG = 25, IAS = 2.5A. (See Figure 12)
ISD 2.5A, di/dt 270A/s, VDD V(BR)DSS,
TJ 150C
2
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IRFR420A/IRFU420A
10
I D , Drain-to-Source Current (A)
1
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
0.1
4.5V
4.5V
0.01 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 1
20s PULSE WIDTH T = 150 C
J 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
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Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics .com
DataShee
10
3.0
ID = 2.5A
I D , Drain-to-Source Current (A)
TJ = 150 C
1
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.5
2.0
TJ = 25 C
0.1
1.5
1.0
0.5
0.01 4.0
V DS = 50V 20s PULSE WIDTH 7.0 8.0 5.0 6.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR420A/IRFU420A
10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
20
ID = 2.5A
1000
VGS , Gate-to-Source Voltage (V)
VDS = 400V VDS = 250V VDS = 100V
15
C, Capacitance(pF)
Ciss
100
10
Coss
10
5
Crss
1 1 10 100 1000
0 0 4
FOR TEST CIRCUIT SEE FIGURE 13
8 12 16
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VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Fig 5. Typical Capacitance Vs. Gate-to-Source Voltage Drain-to-Source Voltage .com
DataShee
10
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
I D , Drain Current (A)
TJ = 150 C
10
10us
1
100us
1
TJ = 25 C
1ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
0.1
TC = 25 C TJ = 150 C Single Pulse
10ms
10
100
1000
10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFR420A/IRFU420A
5.0
VDS VGS
RD
4.0
D.U.T.
+
RG
-VDD
ID , Drain Current (A)
3.0
10V
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
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10% VGS
t d(off) tf td(on) tr Fig 9. Maximum Drain Current Vs. Case Temperature .com Fig 10b. Switching Time Waveforms
DataShee
10
(Z thJC )
1
D = 0.50
Thermal Response
0.20 0.10 0.05 0.02 0.01
0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = 2. Peak T t1/ t
2 J = P DM x Z thJC
P DM t1 t2 +T C 1
0.0001
0.001
0.01
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR420A/IRFU420A
1 5V
300
EAS , Single Pulse Avalanche Energy (mJ)
250
VDS
L
D R IV E R
TOP BOTTOM ID 1.1A 1.6A 2.5A
200
RG
20V tp
D .U .T
IA S
+ V - DD
A
150
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
100
50
0 25 50 75 100 125 150
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IAS
Starting TJ , Junction Temperature ( C)
DataShee
Fig .com 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current
QG
10 V
QGS VG QGD
V DSav , Avalanche Voltage ( V )
700
650
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
600
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
550 0.0 0.5 1.0 1.5 2.0 2.5
IAV , Avalanche Current ( A)
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRFR420A/IRFU420A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
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DataShee
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Driver Gate Drive P.W. Period D= P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs
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IRFR420A/IRFU420A
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 )
2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 )
1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 )
6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 )
L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN
-B -
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1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 1 .1 4 (.0 4 5 ) 2X 0 .7 6 (.0 3 0 ) 2 .2 8 ( .0 9 0 )
0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 )
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N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) .
M AMB
0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 )
DataShee
4 .5 7 ( .1 8 0 )
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRFU120 916A 12 34
ASSEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
8
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IRFR420A/IRFU420A
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 )
2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S OUR C E 4 - D R A IN
6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 9 .6 5 (.3 8 0 ) 8 .8 9 (.3 5 0 ) 2 3 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 )
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3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 3X 0 .8 9 ( .0 3 5 ) 0 .6 4 ( .0 2 5 ) M AMB
N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U TL IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ).
DataShee
1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .58 (.0 2 3 ) 0 .46 (.0 1 8 )
2 .2 8 (.0 9 0 ) 2X
0 .2 5 (.0 1 0 )
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN T HE ASSEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRFU120 919A 56 78
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
ASSEMBLY LOT CODE
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IRFR420A/IRFU420A
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TR L
16 .3 ( .641 ) 15 .7 ( .619 )
16 .3 ( .64 1 ) 15 .7 ( .61 9 )
12 .1 ( .4 7 6 ) 11 .9 ( .4 6 9 )
F E E D D IR E C T IO N
8.1 ( .3 18 ) 7.9 ( .3 12 )
F E E D D IR E C T IO N
NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S ( IN C H E S ). 3. O U T LIN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
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1 3 IN C H
16 mm NO TES : 1. O U T L IN E C O N F O R M S T O E IA -48 1.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/01
10
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